The Lai group is equipped with various facilities necessary for the development of III-nitride optoelectronic devices. These facilities, ranging from growth, fabrication, and characterization, are either installed in Lai’s lab, shared by other collaborating groups, or supported by the Optical Sciences Center at NCU. Below are some of the major tools:
(Temperature range: RT ~ 1200 °C)
(Incident Photon to Current Efficiency)System (Excitation wavelength: 300 ~ 1100 nm)
(MOCVD, AIXTRON 200/4 RF)
(supported by Prof. Chien, Fan-Ching in DOP at NCU )
(Excitation sources: 193-nm KrF excimer laser, 325-nm He-Cd laser, 405-nm diode laser)
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